Download Applications of Ion Beams to Metals by W. Buckel, B. Stritzker (auth.), S. T. Picraux, E. P. PDF

By W. Buckel, B. Stritzker (auth.), S. T. Picraux, E. P. EerNisse, F. L. Vook (eds.)

Conferences were held long ago on atomic collision phenomena and at the functions of ion beams to semiconductors. in spite of the fact that, in the prior yr it turned obvious that there's a becoming new quarter of energetic examine related to using ion beams to switch and research the elemental houses of metals. consequently a topical convention was once prepared to compile for the 1st time scientists with a variety of backgrounds and pursuits concerning this box. This publication comprises the continue­ ings of the foreign convention on purposes of Ion Beams to Metals which used to be held in Albuquerque, New Mexico, October 2-4, 1973. a lot of the paintings offered herein represents principles and ideas that have had very little earlier publicity within the open literature. the applying of ion beams to superconducting prop­ erties for instance is sort of new, as is the bankruptcy on ion brought about floor reactions, which include essentially oxidation and corrosion reviews of implanted fabrics. those parts, in addition to the bankruptcy on implantation alloy formation, point out vital destiny parts of the applying of ion beams to metals. A studying of the chapters on superconductivity and on oxida­ tion and corrosion can serve to carry one brand new on approximately all of the current details in those components of the ion beam mod­ ification of metals. A huge standpoint of the oxidation sector is given within the invited paper via G. Dearnaley.

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Thus a smearing of the sharp density of stRtes in nioilium due to the interstitial oxygen atoms, acting as scattering centers for the electrons, might be responsible for this effect(8). Recent experiments on ion implantation in Nb films show similar results(9). A smaller fraction of the specimen, however, exhibits a slightly higher transition temperature. obviously caused by the Ni ions implanted in the surface layer. Several experiments have been performed to demonstrate that the increased pinning is introduced by defects produced in the surface layer during the heavy-ion uombardment.

A homogeneous distribution of the dopant over the host sample is an essential condition of the alloying problem discussed here. As to implantation~ the question arises, how to obtain a constant ion distribution over the target-depth. (It is no problem to reach homogeneity in a plane perpendicular to the ion beam. ) It is proposed to approach this problem by using various ion energies and superposition of the resulting ion distribution functions [13,14]. Following Lindhard et al. ) Finally the total ion distribution is obtained by summation over all energies used for implantation (Fig.

Particular attention was paid to the effect of the polishing procedure on sample quality (compare curves! and II). The material was removed at a rate of roughly 700 A/sec. In the first step, only the edges were polished, and then the edges and the unirradiated surface were polished. The long tail in the J (11) curve of specimen Nb 44 IR, extending to fields above 15 k6e, almost disappeared (Fig. 4 and 2). This tail may have been brought about by a rearrangement of the Ni and gaseous impurity atoms near the edges during the spark erosion of this specimen after the irradiation (only this particular specimen was treated in this manner).

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